Magnetoelectric Devices

This theme is focused on nonvolatile magnetoelectric (ME) devices that utilize voltage-controlled boundary magnetization in magnetoelectric antiferromagnets. The goal is to develop a spintronic device based on a magnetic tunnel junction (MTJ), where the magnetization of a free magnetic layer is voltage controlled through exchange interaction with the boundary magnetization of the adjacent magnetoelectric layer (ME-MTJ). This theme also develops a novel logic device – spinverter – that exploits nonvolatility of the ME-MTJ in the basic CMOS element.