Ferroelectric Devices

This theme is centered on devices that exploit ferroelectric polarization as a state variable and reveal polarization controlled electron and spin tunneling and metal-insulator transitions. The goal is to develop a ferroelectric tunnel junction (FTJ) exhibiting switchable tunneling resistance with resistance ratios exceeding 103 at room temperature.  This theme also develops a ferroelectric field effect transistor (FET) with a programmable Schottky barrier, based on polarization induced metal-insulator transition in correlated oxide materials.